本文主要研究内容
作者刘北云,游聪娅,赵晨,申高亮,刘亚伟,李毓佛,严辉,张永哲（2019）在《High responsivity and near-infrared photodetector based on graphene/MoSe2heterostructure》一文中研究指出：Graphene has attracted great interest in optoelectronics, owing to its high carrier mobility and broadband absorption. However, a graphene photodetector exhibits low photoresponsivity because of its weak light absorption. In this work, we designed a graphene/MoSe2 heterostructure photodetector, which exhibits photoresponse ranging from visible to near infrared and an ultrahigh photoresponsivity up to 1.3 × 104 A·W-1 at 550 nm. The electron–hole pairs are excited in a few-layered MoSe2 and separated by the built-in electric field. A large number of electrons shift to graphene, while the holes remain in the MoSe2, which creates a photogating effect.
Abstract
Graphene has attracted great interest in optoelectronics, owing to its high carrier mobility and broadband absorption. However, a graphene photodetector exhibits low photoresponsivity because of its weak light absorption. In this work, we designed a graphene/MoSe2 heterostructure photodetector, which exhibits photoresponse ranging from visible to near infrared and an ultrahigh photoresponsivity up to 1.3 × 104 A·W-1 at 550 nm. The electron–hole pairs are excited in a few-layered MoSe2 and separated by the built-in electric field. A large number of electrons shift to graphene, while the holes remain in the MoSe2, which creates a photogating effect.
论文参考文献
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论文详细介绍
论文作者分别是来自Chinese Optics Letters的刘北云,游聪娅,赵晨,申高亮,刘亚伟,李毓佛,严辉,张永哲，发表于刊物Chinese Optics Letters2019年02期论文，是一篇关于,Chinese Optics Letters2019年02期论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自Chinese Optics Letters2019年02期论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。
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刘北云：High responsivity and near-infrared photodetector based on graphene/MoSe2heterostructure论文
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